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AL8806
Absolute Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Symbol
ESD HBM
ESD MM
V IN
V SW
V CTRL
I SW-RMS
I SW-PK
T J
T LEAD
T ST
Parameter
Human Body Model ESD Protection
Machine Model ESD Protection
Continuous V IN pin voltage relative to GND
SW voltage relative to GND
CTRL pin input voltage
DC or RMS switch current
Peak switch current (<10%)
Junction Temperature
Lead Temperature Soldering
Storage Temperature Range
Ratings
2.5
200
-0.3 to +40
-0.3 to +40
-0.3 to +6
1.65
3
150
300
-65 to +150
Unit
kV
V
V
V
V
A
A
°C
°C
°C
Caution:
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling
and transporting these devices.
Recommended Operating Conditions (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
V CTRLH
V CTRLDC
V CTRLL
I SW
f OSC
T J
Parameter
Operating Input Voltage relative to GND
Voltage High for PWM dimming relative to GND
Voltage range for 20% to 100% DC dimming relative to GND
Voltage Low for PWM dimming relative to GND
DC or RMS switch current
Switching Frequency
Junction Temperature Range
Min
6.0
2.6
0.5
0
-40
Max
36
5.5
2.5
0.4
1.5
1
+125
Unit
V
V
V
V
A
MHz
°C
Electrical Characteristics (@V IN = 12V, T A = +25°C, unless otherwise specified.)
Symbol
V INSU
V INSH
I Q
I S
V TH
Parameter
Internal regulator start up threshold
Internal regulator hysteresis threshold
Quiescent current
Input supply Current
Set current Threshold Voltage
Conditions
V IN rising
V IN falling
Output not switching (Note 4)
CTRL pin floating f = 250kHz
V CTRL ≥ 2.6V or floating.
Min
100
95
Typ
1.8
100
Max
5.9
300
350
5
105
Unit
V
mV
μA
mA
mV
V TH-H
Set threshold hysteresis
±20
mV
I SET
R CTRL
V REF
R DS(on)
SET pin input current
CTRL pin input resistance
Internal Reference Voltage
On Resistance of SW MOSFET
V SET = V IN -0.1
Referred to internal reference
I SW = 1A
16
50
2.5
0.18
22
0.35
μA
k ?
V
?
I SW_Leakage
? JA
? JC
Switch leakage current
Thermal Resistance Junction-to-Ambient (Note 5)
Thermal Resistance Junction-to-Case (Note 5)
V IN =36V
MSOP-8EP (Note 6)
MSOP-8EP (Note 6)
69
4.3
0.5
μ A
? C/W
Notes:
4. AL8806 does not have a low power standby mode but current consumption is reduced when output switch is inhibited: V SENSE = 0V. Parameter is
tested with V CTRL ≤ 2.5V
5. Dominant conduction path via exposed pad. Refer to figure 5 for the device derating curve.
6. Measured on an FR4 51x51mm PCB with 2oz copper standing in still air with minimum recommended pad layout on top layer and thermal vias to
bottom layer maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.
AL8806
Document number: DS35144 Rev. 5 - 2
3 of 15
www.diodes.com
July 2013
? Diodes Incorporated
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